Title :
Radiation from transistor in microstrip line
Author :
Hall, Peter S. ; Haskins, P.M.
Author_Institution :
Sch. of Electr. Eng. & Sci., R. Mil. Coll. of Sci., Shrivenham, UK
fDate :
5/23/1991 12:00:00 AM
Abstract :
Closed form expressions for the field and total power radiated from a transistor in a microstrip line are given in terms of the three-port S parameters of the device. The expressions are confirmed experimentally. Power radiated can be substantially higher than that from an equivalent open circuit line with equal power incident with actual values dependent on the transistor gain. Such calculations are important in assessing the likely radiation pattern perturbation in planar active antennas.
Keywords :
S-parameters; active antennas; antenna theory; equivalent circuits; microstrip antennas; strip lines; transistors; line discontinuity model; microstrip line; planar active antennas; radiated field; radiation pattern perturbation; three-port S parameters; total radiated power; transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910615