• DocumentCode
    1537208
  • Title

    Fluorescence lifetime studies of MeV erbium implanted silica glass

  • Author

    Lidgard, A. ; Polman, A. ; Jacobsen, D.C. ; Kistler, Rolf ; Poate, J.M. ; Becker, P.C.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    27
  • Issue
    11
  • fYear
    1991
  • fDate
    5/23/1991 12:00:00 AM
  • Firstpage
    993
  • Lastpage
    995
  • Abstract
    MeV erbium ion implantation into various SiO2 glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology.
  • Keywords
    erbium; fluorescence; ion implantation; luminescence of inorganic solids; optical glass; photoluminescence; radiative lifetimes; silicon compounds; 1.6 to 12.8 ms; Er 3+ implanted silica glass; MeV implantation; SiO 2 glasses; excited state; fluorescence lifetime; integrated optics; ion implantation; optically active ion; rare-earth dopant;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910619
  • Filename
    78134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537208