Title :
Fluorescence lifetime studies of MeV erbium implanted silica glass
Author :
Lidgard, A. ; Polman, A. ; Jacobsen, D.C. ; Kistler, Rolf ; Poate, J.M. ; Becker, P.C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
MeV erbium ion implantation into various SiO2 glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology.
Keywords :
erbium; fluorescence; ion implantation; luminescence of inorganic solids; optical glass; photoluminescence; radiative lifetimes; silicon compounds; 1.6 to 12.8 ms; Er 3+ implanted silica glass; MeV implantation; SiO 2 glasses; excited state; fluorescence lifetime; integrated optics; ion implantation; optically active ion; rare-earth dopant;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910619
