State of the art 1.3 mu m lasers by atmospheric pressure MOVPE using tertiary butylphosphine

Excellent 1.3 micrometer buried heterostructure laser devices were realised for the first time with active light-emitting layers grown from the alternative phosphorous precursor TBP instead of phosphine. A wider temperature range than previously reported was explored for growth under TBP. The replacement of phosphine appears entirely feasible, albeit expensive.