• DocumentCode
    1537282
  • Title

    Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

  • Author

    Waters, R.G. ; Bour, D.P. ; Yellen, S.L. ; Ruggieri, N.F.

  • Author_Institution
    McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
  • Volume
    2
  • Issue
    8
  • fYear
    1990
  • Firstpage
    531
  • Lastpage
    533
  • Abstract
    Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; interface structure; semiconductor junction lasers; GaAs-AlGaAs; InGaAs-AlGaAs; dark-line defect formation; growth velocity; rapid degradation; strained InGaAs/AlGaAs quantum well lasers; Degradation; Diodes; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Optical materials; Optical propagation; Quantum well lasers; Radiative recombination; Temperature;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.58039
  • Filename
    58039
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1537282