Title :
Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
Author :
Waters, R.G. ; Bour, D.P. ; Yellen, S.L. ; Ruggieri, N.F.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
Abstract :
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; interface structure; semiconductor junction lasers; GaAs-AlGaAs; InGaAs-AlGaAs; dark-line defect formation; growth velocity; rapid degradation; strained InGaAs/AlGaAs quantum well lasers; Degradation; Diodes; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Optical materials; Optical propagation; Quantum well lasers; Radiative recombination; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
