Title :
High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
Author :
Sebastian, Jürgen ; Beister, Gert ; Bugge, Frank ; Buhrandt, F. ; Erbert, Goetz ; Hänsel, H.G. ; Hülsewede, Ralf ; Knauer, Arne ; Pittroff, Wolfgang ; Staske, Ralf ; Schröder, M. ; Wenzel, Hans ; Weyers, Markus ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
AlGaAs-based large optical cavity (LOC) laser diodes (LDs) emitting at 808 nm using a tensile-strained GaAsP quantum-well (QW) were developed. LDs with 1-μm-LOC and 2 μm-LOC structure show a very high continuous wave (CW) output power (8.9 W), a good wall-plug efficiency (50%) and a low degradation rate (10-5 h-1 ). The power-current characteristics of broad area LDs with the 1-μm-LOC structure having a higher aluminum content in the waveguide layer exhibit a higher temperature stability. The 2-μm-LOC diode lasers with a lower aluminum content and thinner cladding layers has a slightly smaller vertical far-field divergence and a smaller series resistance. The 2-μm-LOC structure was used in laser bars. They have a filling factor of 28% and exhibit a maximum output power of 148 W with a good beam quality of 7.8° x 39° (full-width l/e2-power) at 70 W
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; laser transitions; quantum well lasers; waveguide lasers; 1 mum; 148 W; 2 mum; 70 W; 808 nm; 810 nm; 810-nm GaAsP-AlGaAs diode lasers; AlGaAs-based large optical cavity laser diodes; GaAsP quantum-well laser; GaAsP-AlGaAs; aluminum content; broad area LDs; filling factor; good beam quality; high-power; higher temperature stability; laser bars; maximum output power; narrow beam divergence; power-current characteristics; series resistance; tensile-strained; thinner cladding layers; vertical far-field divergence; very high CW output power; waveguide layer; Aluminum; Degradation; Diode lasers; Lab-on-a-chip; Laser beams; Optical beams; Optical waveguides; Power generation; Quantum well lasers; Stimulated emission;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954147
