A novel approach for improved green-emitting II-VI lasers

Author

Strassburg, Matthias ; Schulz, Oliver ; Pohl, Udo W. ; Bimberg, Dieter ; Itoh, Satoshi ; Nakano, Kazushi ; Ishibashi, Akira ; Klude, Matthias ; Hommel, Detlef

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

Volume

7

Issue

2

fYear

2001

Firstpage

371

Lastpage

375

Abstract

New concepts to improve the performance of green-emitting laser diodes, based on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alleged contact structure are discussed. Using IID, index-guided lasers with low thresholds are fabricated. The introduction of Li₃N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, and extended continuous-wave lifetimes

Keywords

II-VI semiconductors; current density; ion implantation; quantum well lasers; semiconductor doping; zinc compounds; Li₃N; Li₃N-containing contacts; ZnSe; acceptor indiffusion; contact structure; extended continuous-wave lifetimes; green-emitting II-VI lasers; green-emitting laser diodes; implantation-induced disordering; index-guided lasers; low thresholds; p-type doping level; threshold current densities; turn-on voltages; wall-plug efficiencies; Cadmium; Current density; Diode lasers; Fiber lasers; Optical fibers; Optical refraction; Power lasers; Semiconductor lasers; Threshold current; Zinc compounds;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.954152

Filename

954152