Title :
A novel approach for improved green-emitting II-VI lasers
Author :
Strassburg, Matthias ; Schulz, Oliver ; Pohl, Udo W. ; Bimberg, Dieter ; Itoh, Satoshi ; Nakano, Kazushi ; Ishibashi, Akira ; Klude, Matthias ; Hommel, Detlef
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
New concepts to improve the performance of green-emitting laser diodes, based on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alleged contact structure are discussed. Using IID, index-guided lasers with low thresholds are fabricated. The introduction of Li3N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, and extended continuous-wave lifetimes
Keywords :
II-VI semiconductors; current density; ion implantation; quantum well lasers; semiconductor doping; zinc compounds; Li3N; Li3N-containing contacts; ZnSe; acceptor indiffusion; contact structure; extended continuous-wave lifetimes; green-emitting II-VI lasers; green-emitting laser diodes; implantation-induced disordering; index-guided lasers; low thresholds; p-type doping level; threshold current densities; turn-on voltages; wall-plug efficiencies; Cadmium; Current density; Diode lasers; Fiber lasers; Optical fibers; Optical refraction; Power lasers; Semiconductor lasers; Threshold current; Zinc compounds;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.954152
