A graded index single quantum well bistable laser

Author

Cooke, P. ; Taylor, G.W. ; Claisse, P.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

2

Issue

8

fYear

1990

Firstpage

537

Lastpage

539

Abstract

The authors report the first implementation of a buried heterostructure DOES (double heterostructure optoelectronic switch), which incorporates the principles of graded-index, single-quantum-well (GRIN SQW) lasers. Continuous operation and a small signal optical bandwidth of 1.5 GHz were obtained when biased into the on-state. This is consistent with the bond pad side employed. This GRIN SQW DOES laser, fabricated in two-terminal BH form, has been shown to have properties commensurate with the growth and processing parameters employed. Although limited to two-terminal operation, performance is comparable to existing devices with similar designs.<>

Keywords

gradient index optics; integrated optoelectronics; optical bistability; optical switches; semiconductor junction lasers; 1.5 GHz; CW lasing; bond pad side; buried heterostructure; double heterostructure optoelectronic switch; graded index single quantum well bistable laser; on-state; signal optical bandwidth; two-terminal BH form; Bandwidth; Contacts; High speed optical techniques; Optical bistability; Optical devices; Optical interconnections; Optical switches; Quantum well lasers; Stimulated emission; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.58041

Filename

58041