Title :
Active mode locking of an erbium-doped fiber laser using an intracavity laser diode device
Author :
Wigley, P.G.J. ; Babushkin, A.V. ; Vukusic, J.I. ; Taylor, J.R.
Author_Institution :
Dept. of Phys., Imperial Coll., London, UK
Abstract :
A ridge waveguide, GaInAsP semiconductor laser chip has been used intracavity as a loss modulator in an erbium-doped fiber laser. Operating at modulation rates of around 500 MHz, typical pulse durations of 40 ps were obtained, with average output powers of up to 10 mW.<>
Keywords :
erbium; fibre optics; laser cavity resonators; laser mode locking; semiconductor junction lasers; solid lasers; 10 mW; 40 ps; 500 MHz; GaInAsP semiconductor laser chip; fiber laser; intracavity; intracavity laser diode; loss modulator; modulation rates; ridge waveguide; Diode lasers; Erbium-doped fiber lasers; Laser mode locking; Optical fiber devices; Optical pulse generation; Pulse amplifiers; Pulse modulation; Pump lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
