Title :
A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with Halos or pockets
Author :
Van Meer, Hans ; De Meyer, Kristin
Author_Institution :
IMEC, Leuven, Belgium
fDate :
10/1/2001 12:00:00 AM
Abstract :
The exact solution of the two-dimensional (2-D) Poisson´s equation has been analytically derived for fully-depleted (FD) SOI MOSFETs with Halos or pockets. The approach uses a three-zone Green´s function solution technique. Explicit equations for the 2-D electrical potential as well as for both front- and back-side threshold voltages have been derived. The accuracy of the equations has been verified by a 2-D numerical device simulator. From the presented results, it can be concluded that the analytically derived model for the electric potential and threshold voltages are in good agreement with 2-D numerical simulation data
Keywords :
Green´s function methods; MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; 2D analytical threshold voltage model; 2D electrical potential; Halos; Poisson´s equation; Si; back-side threshold voltages; front-side threshold voltages; fully-depleted SOI MOSFETs; pockets; three-zone Green´s function solution; Analytical models; Eigenvalues and eigenfunctions; Electric potential; MOSFETs; Numerical simulation; Poisson equations; Semiconductor films; Silicon; Threshold voltage; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
