Title :
Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV
Author :
Melik-Martirosian, Ashot ; Ma, Tso-Ping
Author_Institution :
Center for Microelectron. Mater. & Structures, Yale Univ., New Haven, CT, USA
fDate :
10/1/2001 12:00:00 AM
Abstract :
An improved oxide-charge and interface-trap lateral profiling charge pumping technique (iLPCP) is described. Erase-induced oxide charge and interface traps are investigated in flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results. A comparative study of iLPCP and of an existing direct current (DCIV) technique for lateral profiling of interface traps is conducted: both erase- and program-induced interface traps are investigated in flash EPROM devices. The results indicate that 1) iLPCP probes a much bigger portion of the gate region; 2) iLPCP probes a wider energy range; 3) DCIV is more sensitive deep in the channel and thus complements iLPCP
Keywords :
MOS memory circuits; MOSFET; electron traps; flash memories; hot carriers; integrated circuit measurement; integrated circuit reliability; DCIV; MOSFET devices; charge pumping; energy range; erase-induced oxide charge; flash EPROM devices; gate region; iLPCP; interface traps; lateral profiling; oxide charge; Charge measurement; Charge pumps; Current measurement; EPROM; Electron traps; Flash memory; Hot carriers; MOSFET circuits; Probes; Pulse measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
