Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV

Author

Melik-Martirosian, Ashot ; Ma, Tso-Ping

Author_Institution

Center for Microelectron. Mater. & Structures, Yale Univ., New Haven, CT, USA

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2303

Lastpage

2309

Abstract

An improved oxide-charge and interface-trap lateral profiling charge pumping technique (iLPCP) is described. Erase-induced oxide charge and interface traps are investigated in flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results. A comparative study of iLPCP and of an existing direct current (DCIV) technique for lateral profiling of interface traps is conducted: both erase- and program-induced interface traps are investigated in flash EPROM devices. The results indicate that 1) iLPCP probes a much bigger portion of the gate region; 2) iLPCP probes a wider energy range; 3) DCIV is more sensitive deep in the channel and thus complements iLPCP

Keywords

MOS memory circuits; MOSFET; electron traps; flash memories; hot carriers; integrated circuit measurement; integrated circuit reliability; DCIV; MOSFET devices; charge pumping; energy range; erase-induced oxide charge; flash EPROM devices; gate region; iLPCP; interface traps; lateral profiling; oxide charge; Charge measurement; Charge pumps; Current measurement; EPROM; Electron traps; Flash memory; Hot carriers; MOSFET circuits; Probes; Pulse measurements;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954469

Filename

954469