Title :
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
Author :
Ma, Tiezhong ; Campbell, Stephen A. ; Smith, Ryan ; Hoilien, Noel ; He, Boyong ; Gladfelter, Wayne L. ; Hobbs, Christopher ; Buchanan, Doug ; Taylor, Charles ; Gribelyuk, Michael ; Tiner, Mike ; Coppel, Matthew ; Lee, Jang Jung
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
10/1/2001 12:00:00 AM
Abstract :
The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low inversion layer mobility. The amorphous interfacial layer is compositionally graded and contains a high concentration of Si-Ti bonds. In contrast, ZrO2 and HfO 2 form well defined oxynitride interfacial layers and a good interface with silicon with much less fixed charge. The electron inversion layer mobility for an HfO2/SiOxNy /Si stack appears comparable to that of a conventional SiO2 /Si interface
Keywords :
CVD coatings; electron mobility; hafnium compounds; insulating thin films; inversion layers; permittivity; titanium compounds; zirconium compounds; Group IVB metal oxide thin film; HfO2; TiO2; ZrO2; anhydrous metal nitrate precursor; chemical vapor deposition; electrical characteristics; electron inversion layer mobility; fixed charge density; high permittivity gate insulator; interfacial layer; Dielectrics and electrical insulation; FETs; Hafnium oxide; Helium; Metal-insulator structures; Permittivity; Production; Semiconductor materials; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
