Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Author

Leung, Bong-Hung ; Fong, Wai-Keung ; Zhu, Chang-Fei ; Surya, Charles

Author_Institution

Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Kowloon, China

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2400

Lastpage

2404

Abstract

Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34×10 ^-2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects

Keywords

Hall mobility; III-V semiconductors; flicker noise; gallium compounds; molecular beam epitaxial growth; plasma deposition; random noise; semiconductor epitaxial layers; stress relaxation; wide band gap semiconductors; 500 C; 690 C; 800 nm; GaN; GaN epitaxial films; GaN thin films; Hooge parameters; RF-MBE; RF-plasma assisted molecular beam epitaxy; crystalline defect reduction; double buffer layers; intermediate-temperature buffer layers; low-frequency excess noise; low-temperature buffer layer; noise properties; optimal buffer layer thickness; residual strain relaxation; Buffer layers; Capacitive sensors; Crystalline materials; Epitaxial layers; Gallium nitride; Low-frequency noise; Molecular beam epitaxial growth; Noise measurement; Noise reduction; Sputtering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954483

Filename

954483