A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

Author

Tan, Yue ; Kumar, Mahender ; Cai, Jun ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2428

Lastpage

2433

Abstract

This paper presents a silicon-on-insulator (SOI) lateral double-diffused MOS transistor (LDMOS) technology, which is compatible with complementary metal oxide semiconductor (CMOS), lateral bipolar junction transistor (BJT), and passive components for the implementation of radio frequency (RF) fully-integrated power amplifiers (IPAs) used in wireless communications. This technology allows complete integration of the low-cost and low-power front-end circuits with the baseband circuits for single-chip wireless communication systems. The SOI LDMOS transistor (0.35 μm channel length, 3.85 μm drift length, 4.5 GHz f_T, and 20 V breakdown voltage), CMOS transistors (1.5 μm channel length 0.8/-1.2 V threshold voltage), lateral BJT (18 V BV_CBO, and 6.4 V BV_CEO) and high Q-factor (up to 6.1 at 900 MHz and 7.2 at 1.8 GHz for an inductance of 7 nH) on-chip inductor are designed and fabricated to show the feasibility of the IPA implementation. A fully functional high performance integrated power amplifier for 900 MHz wireless communication transceivers is also demonstrated

Keywords

MOS analogue integrated circuits; MOSFET; UHF integrated circuits; UHF power amplifiers; bipolar transistors; inductors; silicon-on-insulator; transceivers; 0.35 mum; 1.5 mum; 1.8 GHz; 18 V; 20 V; 3.85 mum; 4.5 GHz; 6.4 V; 900 MHz; CMOS compatibility; CMOS transistors; SOI LDMOS technology; SOI lateral double-diffused MOS transistor technology; baseband circuits; channel length; drift length; fully-integrated RF power amplifiers; high Q-factor on-chip inductor; lateral bipolar junction transistor compatibility; low-cost low-power front-end circuits; passive component compatibility; single-chip wireless communication systems; threshold frequency; wireless communication transceivers; wireless communications; CMOS technology; Circuits; Communications technology; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Silicon on insulator technology; Wireless communication;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954488

Filename

954488