Low residual reflectivity of angled-facet semiconductor laser amplifiers

Author

Collar, A.J. ; Henshall, G.D. ; Farré, J. ; Mikkelsen, B. ; Wang, Z. ; Eskildsen, L. ; Olesen, D.S. ; Stubkjaer, K.E.

Author_Institution

STC Technol. Ltd., Harlow, UK

Volume

2

Issue

8

fYear

1990

Firstpage

553

Lastpage

555

Abstract

Ridge-waveguide angled-facet semiconductor laser amplifiers for the 1.5 mu m band have been fabricated with facet angles of 7 degrees and 10 degrees . Gain measurements performed with a stable, computer-controlled setup have revealed gain ripples as low as 0.025 dB at 22 dB gain for a 10 degrees device. This corresponds to a residual reflectivity of 1*10/sup -5/. Results demonstrate that the residual reflectivity of angled devices with one-layer antireflection coatings can be as low as that for normal facet devices with highly controlled double-layer antireflection coatings.<>

Keywords

antireflection coatings; laser variables measurement; reflectivity; semiconductor junction lasers; 1.5 micron; angled-facet semiconductor laser amplifiers; double-layer antireflection coatings; facet angles; gain ripples; laser gain measurements; normal facet devices; one-layer antireflection coatings; residual reflectivity; ridge waveguide lasers; Coatings; Dry etching; Gain measurement; Optical device fabrication; Performance evaluation; Performance gain; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.58046

Filename

58046