Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure

Author

Magari, Katsuaki ; Okamoto, Minoru ; Yasaka, Hiroshi ; Sato, Kenji ; Noguchi, Yoshio ; Mikami, Osamu

Author_Institution

NTT Electron. Lab., Kanagawa, Japan

Volume

2

Issue

8

fYear

1990

Firstpage

556

Lastpage

558

Abstract

Signal gain agreement between TE and TM modes is realized under a specific operation condition in a traveling wave type amplifier using a strained multiple quantum well structure for the first time. The signal gain of the TM mode completely agrees with that of the TE mode at an amplifier driving current of 70 mA. The identical signal gain is 7.5 dB at present. However, the signal gain could be easily improved by using a device with a longer active region. In order to achieve polarization insensitive TWAs, the design parameter is the only confinement factor for the conventional bulk type.<>

Keywords

laser modes; light polarisation; semiconductor junction lasers; semiconductor quantum wells; 7.5 dB; 70 mA; TE modes; TM modes; amplifier driving current; confinement factor; conventional bulk type; identical signal gain; longer active region; polarization insensitive TWA; semiconductor lasers; signal gain; strained multiple quantum well structure; traveling wave type amplifier; Capacitive sensors; Indium phosphide; Operational amplifiers; Optical amplifiers; Polarization; Quantum well devices; Semiconductor optical amplifiers; Tensile strain; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.58047

Filename

58047