Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Author

Jeon, Sanghoon ; Park, Hyun-Min ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Energy Res. Inst., Taejon, South Korea

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2442

Lastpage

2445

Abstract

A InGaP/GaAs heterojunction bipolar transistor structure is proposed in which the base epi-layer underneath the extended ledge works as a base ballast resistor. The structure eliminates the critical alignment for a passivation ledge formation as well as additional process steps for external base ballast resistors. Both ballasted and unballasted devices were fabricated and compared. A small signal equivalent circuit gives us the magnitude of the effective ballast resistance. The thermal characteristics, including gain-collapsed I-V and V_be regression curve are shown and modeled. The temperature dependency of base sheet resistance and its influence on the device performance are also discussed

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; passivation; semiconductor device models; semiconductor device reliability; InGaP-GaAs; InGaP/GaAs HBT; ballasted devices; base ballast resistor; base sheet resistance; effective ballast resistance; extended ledge; gain-collapsed I-V regression curve; heterojunction bipolar transistor structure; microwave characteristics; passivation ledge formation; small signal equivalent circuit; temperature dependency; thermal characteristics; unballasted devices; Electronic ballasts; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Microwave devices; Passivation; Resistors; Temperature dependence; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954490

Filename

954490