Title :
Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n+-p-well diodes
Author :
Poyai, A. ; Simoen, E. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
10/1/2001 12:00:00 AM
Abstract :
A procedure is proposed to extract the thermal generation lifetime (τg) profile in the depletion region of shallow n+ -p-well junctions surrounded by shallow trench isolation from the generation current density. This is achieved by taking account of the electric field enhancement factor. As will be shown, a more realistic τg profile is obtained that better reflects the trap density profile, corresponding with the deep boron ion implantation-related extended defects
Keywords :
carrier lifetime; current density; deep levels; doping profiles; high field effects; ion implantation; isolation technology; leakage currents; p-n junctions; semiconductor diodes; Si:B; deep boron ion implantation-related extended defects; depletion region; electric field enhancement factor; generation current density; generation lifetime; high electric field; leakage current; reverse generation current component; shallow n+-p-well diodes; shallow n+-p-well junctions; shallow trench isolation; submicron CMOS technology; thermal generation lifetime profile; trap density profile; Boron; CMOS technology; Current density; Ion implantation; Leakage current; Radiative recombination; Schottky barriers; Schottky diodes; Semiconductor diodes; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
