DocumentCode
1537590
Title
Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
Author
Roldán, Juan B. ; Gámiz, Francisco ; López-Villanueva, J.A. ; Cartujo, P. ; Godoy, A.
Author_Institution
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
Volume
48
Issue
10
fYear
2001
fDate
10/1/2001 12:00:00 AM
Firstpage
2447
Lastpage
2449
Abstract
An accurate model for the inversion charge centroid of strained-Si on Si1-xGex metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model
Keywords
Ge-Si alloys; MOSFET; doping profiles; elemental semiconductors; inversion layers; quantum interference phenomena; semiconductor device models; silicon; Ge mole fraction; Si-SiGe; accurate model; corrected gate-oxide width; doping concentration; inversion charge; inversion charge centroid; iterative Newton numerical scheme; nonuniform adaptive mesh; quantum effects; self-consistent Poisson-Schrodinger solver; short channel effects; strained-Si layer width; strained-Si on Si1-xGex MOSFET inversion layer centroid modeling; Capacitive sensors; Doping; Germanium silicon alloys; MOSFETs; Poisson equations; Semiconductor process modeling; Silicon germanium; Thickness control; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.954492
Filename
954492
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