Physical modeling of the reverse-short-channel effect for circuit simulation

Author

Miura-Mattausch, M. ; Suetake, M. ; Mattausch, H.J. ; Kumashiro, S. ; Shigyo, N. ; Odanaka, S. ; Nakayama, N.

Author_Institution

Dept. of Electr. Eng., Hiroshima Univ., Japan

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2449

Lastpage

2452

Abstract

The proposed threshold-voltage (V_th) model for circuit simulation includes reverse-short-channel effects (RSCE) and short-channel effects (SCE) based on their respective physical origins. A linear vertical-impurity profile approximation for simplified RSCE-modeling already enables 8 mV average V_th-accuracy (max<45 mV) under all bias conditions for source, drain, and bulk for L_gate down to 0.15 μm. The complete V_th-model needs only ten constant L_gate-independent parameters

Keywords

MOSFET; circuit simulation; doping profiles; semiconductor device models; 0.15 mum; MOSFET; RSCE-modeling; bias conditions; channel impurity profile; circuit simulation; linear vertical-impurity profile approximation; physical modeling; reverse-short-channel effect; short-channel effect; threshold-voltage model; Circuit simulation; Doping profiles; Electron mobility; Germanium silicon alloys; MOSFETs; Notice of Violation; Semiconductor process modeling; Silicon germanium; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954493

Filename

954493