L/S-band 140-W push-pull power AlGaAs/GaAs HFET´s for digital cellular base stations

Author

Takenaka, I. ; Ishikura, K. ; Takahashi, H. ; Asano, K. ; Morikawa, J. ; Satou, K. ; Kishi, K. ; Hasegawa, K. ; Tokunaga, K. ; Emori, F. ; Kuzuhara, M.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Shiga, Japan

Volume

34

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1181

Lastpage

1187

Abstract

An L/S band high-power and low-distortion AlGaAs/GaAs heterostructure field-effect-transistor amplifier has been developed. The amplifier employed two pairs of prematched GaAs chips mounted on a single package, and the total output power was combined in a push-pull configuration with a low-loss microstrip balun circuit. The developed amplifier demonstrated state of-the-art performance of 140 W output power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance, which is suitable for digital cellular base station system applications

Keywords

III-V semiconductors; aluminium compounds; cellular radio; differential amplifiers; digital radio; field effect integrated circuits; field effect transistor circuits; gallium arsenide; microstrip circuits; microwave integrated circuits; microwave power amplifiers; p-n heterojunctions; 140 W; 2.2 GHz; 31.5 dB; AlGaAs-GaAs; AlGaAs/GaAs heterostructure FET amplifier; L/S-band; digital cellular base station; digital cellular base stations; distortion performance; microstrip balun circuit; prematched GaAs chips; push-pull configuration; push-pull power HFET; Circuits; Gallium arsenide; HEMTs; High power amplifiers; Impedance matching; MODFETs; Microstrip; Packaging; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.782074

Filename

782074