48-GHz digital ICs and 85-GHz baseband amplifiers using transferred-substrate HBT´s

Author

Mensa, D. ; Pullela, R. ; Lee, Q. ; Guthrie, J. ; Martin, S.C. ; Smith, R.P. ; Jaganathan, S. ; Mathew, T. ; Agarwal, B. ; Long, S.I. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

34

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1196

Lastpage

1203

Abstract

Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicrometer emitter-base and collector-base junctions, minimizing RC parasitics and increasing f_max to 500 GHz. The process also provides a microstrip wiring environment on a low-ε_r dielectric substrate. First design iterations of emitter-coupled-logic master-slave flip-flops exhibit 48 GHz maximum clock frequency when connected as static frequency dividers. Baseband amplifiers have been demonstrated with bandwidths up to 85 GHz

Keywords

bipolar logic circuits; emitter-coupled logic; flip-flops; frequency dividers; heterojunction bipolar transistors; microwave amplifiers; 48 GHz; 500 GHz; 85 GHz; RC parasitics; baseband amplifiers; clock frequency; collector-base junctions; dielectric substrate; digital IC; emitter-coupled-logic master-slave flip-flops; heterojunction bipolar transistors; microstrip wiring; submicrometer emitter-base junctions; transferred-substrate HBT; Bandwidth; Baseband; Clocks; Dielectric substrates; Flip-flops; Frequency conversion; Heterojunction bipolar transistors; Master-slave; Microstrip; Wiring;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.782076

Filename

782076