Title :
A high-gain monolithic D-band InP HEMT amplifier
Author :
Pobanz, Carl W. ; Matloubian, M. ; Lui, M. ; Sun, H.C. ; Case, Michael ; Ngo, C.M. ; Janke, P. ; Gaier, Todd ; Samoska, Lorene
Author_Institution :
Microelectron. Lab., HRL Labs., Malibu, CA, USA
fDate :
9/1/1999 12:00:00 AM
Abstract :
This paper describes a three-stage monolithic amplifier that exhibits a small-signal gain of 30 dB at 140 GHz. The amplifier employs AlInAs/GaInAs/InP high electron mobility transistor devices with 0.1×150 μm2 gate periphery, is implemented with coplanar waveguide circuitry fabricated on an InP substrate, and occupies a total area of 2 mm2. Gain exceeding 10 dB was measured on-wafer from 129 to 157 GHz. This is the highest reported gain per stage for a transistor amplifier operating at these frequencies
Keywords :
III-V semiconductors; MMIC amplifiers; coplanar waveguide components; field effect MMIC; high electron mobility transistors; indium compounds; 129 to 157 GHz; 140 GHz; 2 m; 30 dB; AlInAs/GaInAs/InP HEMT; InP; InP substrate; monolithic D-band InP HEMT amplifier; small-signal gain; transistor amplifier; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Laboratories; MMICs; Millimeter wave radar; Millimeter wave technology; Radio frequency; Sun;
Journal_Title :
Solid-State Circuits, IEEE Journal of
