Broad bandwidth transformer coupled differential amplifiers for high dynamic range

Author

Meharry, David E. ; Sanctuary, Jay E. ; Golja, Bogdan A.

Author_Institution

Sanders Associates Inc., Nashua, NH, USA

Volume

34

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1233

Lastpage

1238

Abstract

Broad bandwidth amplifiers are typically limited in their spurious free dynamic range by second-order products. We have demonstrated more than 30 dB reduction in second-order products for amplifiers with 1-2 octaves of bandwidth utilizing a novel circuit approach. Improved planar baluns (180° transformers) are combined with differential amplifiers fabricated from 0.25-μm GaAs pseudomorphic high electron mobility transistors to implement 4-16-GHz and 3-6-GHz small-signal amplifiers. Measured values of OIP2 exceed 60 dBm with a 1-dB compression level of approximately 5 dBm. These unprecedented levels enable miniaturized, low-power front ends for broad bandwidth microwave systems

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; baluns; differential amplifiers; gallium arsenide; intermodulation distortion; wideband amplifiers; 0.25 micron; 12 GHz; 3 GHz; 3 to 14 GHz; GaAs; GaAs PHEMTs; broad bandwidth amplifiers; broad bandwidth microwave systems; high dynamic range; high electron mobility transistors; low-power front ends; planar baluns; pseudomorphic HEMT; second-order products reduction; small-signal amplifiers; transformer coupled differential amplifiers; Bandwidth; Coupling circuits; Differential amplifiers; Dynamic range; Electron mobility; Gallium arsenide; HEMTs; Impedance matching; MODFETs; PHEMTs;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.782081

Filename

782081