Title :
Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain
Author :
Boermans, M.J.B. ; Valster, A. ; Van der Heyden, J.M.M.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
GaInP/AlGaInP double heterostructure lasers can be obtained with either TE or TM polarised emission. In addition it it shown that, by using appropriate samples, TE or TM lasing can be selected by changing the temperature or the cavity length.
Keywords :
aluminium compounds; gallium arsenide; indium compounds; light polarisation; p-n heterojunctions; semiconductor junction lasers; GaInP-AlGaInP; TE polarised emission; TM polarised emission; cavity length; double heterostructure lasers; growth-controlled strain; polarised laser emission; semiconductor laser; temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900922
