Title :
Effects of forward biasing the substrate on the low temperature behaviour of n-MOS transistors
Author :
De la Hidalga-W, F.J. ; Deen, M.J. ; Gutierrez-D., E.A. ; Balestra, F.
Author_Institution :
Nat. Inst. of Astrophys., Opt. & Electron., Puebla, Mexico
fDate :
8/14/1997 12:00:00 AM
Abstract :
The effect on the electrical behaviour of forward-biasing the substrate of the n-MOSFET at varying temperatures is investigated. Results of the DC characteristics are presented for several forward and reverse substrate voltages over a wide temperature range from room temperature to 5 K
Keywords :
MOSFET; cryogenic electronics; 5 to 300 K; DC characteristics; forward bias; low temperature electrical behaviour; n-MOS transistor; substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970982
