• DocumentCode
    1538063
  • Title

    Effects of forward biasing the substrate on the low temperature behaviour of n-MOS transistors

  • Author

    De la Hidalga-W, F.J. ; Deen, M.J. ; Gutierrez-D., E.A. ; Balestra, F.

  • Author_Institution
    Nat. Inst. of Astrophys., Opt. & Electron., Puebla, Mexico
  • Volume
    33
  • Issue
    17
  • fYear
    1997
  • fDate
    8/14/1997 12:00:00 AM
  • Firstpage
    1456
  • Lastpage
    1458
  • Abstract
    The effect on the electrical behaviour of forward-biasing the substrate of the n-MOSFET at varying temperatures is investigated. Results of the DC characteristics are presented for several forward and reverse substrate voltages over a wide temperature range from room temperature to 5 K
  • Keywords
    MOSFET; cryogenic electronics; 5 to 300 K; DC characteristics; forward bias; low temperature electrical behaviour; n-MOS transistor; substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970982
  • Filename
    621634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1538063