DocumentCode
1538228
Title
Room temperature operation of single-mode DBR lasers at 635 nm
Author
Gauggel, H.-P. ; Winterhoff, R. ; Kuhn, J. ; Scholz, F. ; Schweizer
Author_Institution
4. Phys. Inst., Stuttgart Univ., Germany
Volume
33
Issue
17
fYear
1997
fDate
8/14/1997 12:00:00 AM
Firstpage
1466
Lastpage
1467
Abstract
Single-mode operation of first-order GaInP-AlGaInP DBR lasers at 635 nm is reported. The lasers were realised by one-step epitaxy and post-epitaxial structuring of surface gratings. The lasers with DBR grating periods between 97 and 100 nm show stable single-mode operation in the wavelength range 633.5-647.4 nm at room temperature and can be operated at up to 50°C
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser modes; laser stability; laser transitions; semiconductor lasers; 20 to 50 C; 633.5 to 647.4 nm; 635 nm; DBR grating; GaInP-AlGaInP; first-order DBR lasers; one-step epitaxy; post-epitaxial structuring; room temperature operation; single mode DBR lasers; stable single mode operation; surface gratings;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970968
Filename
621640
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