Title :
Room temperature operation of single-mode DBR lasers at 635 nm
Author :
Gauggel, H.-P. ; Winterhoff, R. ; Kuhn, J. ; Scholz, F. ; Schweizer
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
fDate :
8/14/1997 12:00:00 AM
Abstract :
Single-mode operation of first-order GaInP-AlGaInP DBR lasers at 635 nm is reported. The lasers were realised by one-step epitaxy and post-epitaxial structuring of surface gratings. The lasers with DBR grating periods between 97 and 100 nm show stable single-mode operation in the wavelength range 633.5-647.4 nm at room temperature and can be operated at up to 50°C
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser modes; laser stability; laser transitions; semiconductor lasers; 20 to 50 C; 633.5 to 647.4 nm; 635 nm; DBR grating; GaInP-AlGaInP; first-order DBR lasers; one-step epitaxy; post-epitaxial structuring; room temperature operation; single mode DBR lasers; stable single mode operation; surface gratings;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970968
