DocumentCode :
1538415
Title :
Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique
Author :
Sugg, A.R. ; Leburton, Jean-Pierre C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL, USA
Volume :
27
Issue :
2
fYear :
1991
fDate :
2/1/1991 12:00:00 AM
Firstpage :
224
Lastpage :
231
Abstract :
Modulation-doped and intrinsic multiple-quantum-well (MQW) structures under applied electric fields are investigated using the transfer-matrix technique (TMT). A method for locating quasi-eigenvalue energies is introduced and compared to traditional techniques on the basis of the occupation probability and transmission coefficient. Electron and heavy-hole energy quasi-eigenvalues and wave functions are calculated for modulation-doped and intrinsic quantum wells. The upper subbands of the two cases are found to vary significantly from one another in the presence of applied electric fields. The TMT is demonstrated to be a versatile method for modeling MQW structures under linear and nonlinear electric fields
Keywords :
modelling; semiconductor quantum wells; applied electric fields; heavy-hole energy quasi-eigenvalues; intrinsic quantum wells; modelling; modulation-doped multiple-quantum-well structures; occupation probability; quasi-eigenvalue energies; transfer-matrix technique; transmission coefficient; upper subbands; wave functions; Chemical compounds; Effective mass; Eigenvalues and eigenfunctions; Electrons; Epitaxial layers; Equations; Molecular beam epitaxial growth; Quantum well devices; Semiconductor process modeling; Wave functions;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.78223
Filename :
78223
Link To Document :
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