• DocumentCode
    1538568
  • Title

    46 Gbit/s super-dynamic decision circuit module using InAlAs/InGaAs HEMTs

  • Author

    Yoneyama, M. ; Otsuji, T. ; Imai, Y. ; Yamaguchi, S. ; Enoki, T. ; Umeda, Y. ; Hagimoto, K.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    33
  • Issue
    17
  • fYear
    1997
  • fDate
    8/14/1997 12:00:00 AM
  • Firstpage
    1472
  • Lastpage
    1474
  • Abstract
    The authors describe a 46 Gbits super-dynamic type decision circuit module that uses InAlAs/InGaAs HEMTs. At a data rate of 40 Gbit/s, the module shows an input data sensitivity of 104 mVpp and a clock phase margin of 212
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; decision circuits; field effect digital integrated circuits; gallium arsenide; indium compounds; optical communication equipment; time division multiplexing; 0.1 micron; 40 to 46 Gbit/s; HEMT IC; InAlAs-InGaAs; TDM fibre-optic communication; clock phase margin; input data sensitivity; super-dynamic decision circuit module;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971007
  • Filename
    621646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1538568