DocumentCode :
1538614
Title :
3.3 V CMOS built-in current sensor
Author :
Maidon, Y. ; Deval, Y. ; Begueret, J.B. ; Tomas, J. ; Dom, J.P.
Author_Institution :
Bordeaux I Univ., Talence, France
Volume :
33
Issue :
5
fYear :
1997
fDate :
2/27/1997 12:00:00 AM
Firstpage :
345
Lastpage :
346
Abstract :
A CMOS built-in current sensor dedicated to power supply current monitoring is proposed, which takes advantage of the parasitic resistor attached to an interconnection layer. Simulation results highlight the behaviour of the sensor in terms of speed, linearity and noise. Process dependencies are taken into account
Keywords :
CMOS analogue integrated circuits; VLSI; electric current measurement; electric sensing devices; integrated circuit testing; monitoring; 3.3 V; CMOS built-in current sensor; interconnection layer; parasitic resistor; power supply current monitoring; process dependencies; sensor linearity; sensor noise; sensor speed;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970275
Filename :
581010
Link To Document :
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