Title :
3.3 V CMOS built-in current sensor
Author :
Maidon, Y. ; Deval, Y. ; Begueret, J.B. ; Tomas, J. ; Dom, J.P.
Author_Institution :
Bordeaux I Univ., Talence, France
fDate :
2/27/1997 12:00:00 AM
Abstract :
A CMOS built-in current sensor dedicated to power supply current monitoring is proposed, which takes advantage of the parasitic resistor attached to an interconnection layer. Simulation results highlight the behaviour of the sensor in terms of speed, linearity and noise. Process dependencies are taken into account
Keywords :
CMOS analogue integrated circuits; VLSI; electric current measurement; electric sensing devices; integrated circuit testing; monitoring; 3.3 V; CMOS built-in current sensor; interconnection layer; parasitic resistor; power supply current monitoring; process dependencies; sensor linearity; sensor noise; sensor speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970275