Title :
Manufacturable SiGe base HBT realising a 9 GHz-bandwidth preamplifier in 10 Gbit/s optical receiver
Author :
Ryum, B.R. ; Han, T.-H. ; Cho, D.H. ; Lee, S.-M.
Author_Institution :
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
8/14/1997 12:00:00 AM
Abstract :
Using an arsenic-implanted polysilicon emitter/reduced pressure (RP) CVD-grown SiGe-base HBT, with an fT, of 52 GHz, an fmax of 32 GHz with a BVCEO, of 3.5 V, a 9 GHz-bandwidth preamplifier with a transimpedance gain of 45 dBΩ in a 10 Gbit/s optical receiver has been developed
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; digital communication; heterojunction bipolar transistors; optical receivers; preamplifiers; semiconductor materials; wideband amplifiers; 10 Gbit/s; 3.5 V; 32 GHz; 52 GHz; 9 GHz; As-implanted polysilicon emitter; SiGe; manufacturable SiGe base HBT; optical receiver; preamplifier; reduced pressure CVD growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970966
