Title :
Model for carrier capture and escape in multiquantum-well lasers: determination of effective capture time and differential gain
Author :
Plyavenek, A.G. ; Lyubarskii, A.V.
Author_Institution :
Inst. of Radio Eng., Electron. & Autom., Acad. of Sci., Moscow, Russia
fDate :
2/27/1997 12:00:00 AM
Abstract :
A new model that includes the effects of band mixing, strain, space charge, impurity doping, 3D carrier reflections at QW boundaries and intersubband transitions is proposed to determine effective carrier capture time and differential gain in multiquantum-well (MQW) lasers. Results of numerical calculations of these dynamic parameters for 1.3 μm strained InGaAsP/InP MQW lasers are presented
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; semiconductor doping; space-charge-limited conduction; 1.3 micrometre; 3D carrier reflections; III-V semiconductors; InGaAsP-InP; QW boundaries; band mixing; carrier capture; carrier escape; differential gain; dynamic parameters; effective capture time; effective carrier capture time; impurity doping; intersubband transitions; multiquantum-well lasers; space charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970245
