Title :
High reliability, high power, single mode laser diodes
Author :
Welch, David ; Craig, Richard ; Streifer, W. ; Scifres, D.
Author_Institution :
Spectral Diode Labs., San Jose, CA, USA
Abstract :
Single stripe GaAs/AlGaAs, 4 mu m wide real refractive index guided lasers are operated at powers up to 500 mW CW with total conversion efficiencies of 60%. Reliability studies of these lasers indicate an average lifetime of greater than 20000 h at 50 degrees C at an operating power of 100 mW CW. The laser operates in a single transverse and longitudinal mode with a spectral linewidth of less than 6 MHz and a side mode suppression ratio of better than -30 dB.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 100 mW; 4 micron; 50 degC; 500 mW; 6 MHz; 60 percent; CW; GaAs-AlGaAs; III-V semiconductors; average lifetime; longitudinal mode; reliability; side mode suppression ratio; single mode laser diodes; transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900951
