Title :
Fabrication of a 2D photonic bandgap by a holographic method
Author :
Berger, V. ; Gauthier-Lafaye, O. ; Costard, E.
Author_Institution :
Lab. Central de Res., Thomson-CSF, Orsay, France
fDate :
2/27/1997 12:00:00 AM
Abstract :
The authors present the realisation of a 2D photonic bandgap in gallium arsenide, with a holographic lithography technique. The photonic crystal consists of circular etched air holes on a triangular lattice, and has been obtained with the holographic recording of only three plane waves in a photoresist. The quality of the final structure shows that holographic lithography, which is a low cost method compared with electron beam lithography, has high potential for photonic microstructure fabrication
Keywords :
III-V semiconductors; gallium arsenide; holography; optoelectronic devices; photolithography; photonic band gap; semiconductor technology; 2D photonic bandgap; GaAs; circular etched air holes; holographic fabrication method; holographic lithography technique; low cost method; photonic crystal; photonic microstructure fabrication; photoresist; triangular lattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970230
