Title :
Sub-nanosecond access time 2K sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Author :
Thiede, A. ; Bushehri, E. ; Nowotny, U. ; Motzer, M. Rieger ; Sedler, M. ; Bronner, W. ; Hornung, J. ; Kaufel, G. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer Inst. for Appl. Soild State Phys., Freiburg, Germany
fDate :
2/27/1997 12:00:00 AM
Abstract :
The design and performance of a 2 Kbit sine-cosine ROM lookup table in 0.3 μm gate length AlGaAs/GaAs/AlGaAs HEMT technology are presented. A maximum clock frequency of 1.3 GHz is achieved resulting in a sub-nanosecond access time. The power consumption at supply voltages of +1.8 and -2 V is ~2 W
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect memory circuits; gallium arsenide; read-only storage; semiconductor quantum wells; table lookup; -2 V; 0.3 micron; 1.3 GHz; 1.8 V; 2 Kbit; 2 W; AlGaAs-GaAs-AlGaAs; ROM lookup table; maximum clock frequency; quantum well HEMT technology; sine-cosine-ROM; subnanosecond access time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970278
