Title :
High-reliability flip-chip GaInAs/InP pin photodiode
Author :
Wada, O. ; Kumai, T. ; Hamaguchi, Hiroki ; Makiuchi, M. ; Kuramata, Akito ; Mikawa, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Lensed, small-junction, flip-chip GaInAs/InP pin photodiodes were fabricated by introducing planar junction and reliable metallisation structures. Low dark current (<100 pA), high quantum efficiency (80%) with large fibre alignment tolerance (42 mu m) and also large bandwidth (21 GHz) characteristics were achieved. Aging test carried out at 180 degrees C for 3000 h confirmed their high reliability.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; 180 degC; 21 GHz; 80 percent; GaInAs-InP; III-V semiconductors; aging; dark current; flip-chip GaInAs/InP pin photodiode; metallisation structures; planar junction; quantum efficiency; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900953
