Title :
AlGaN/AlN/GaN high-power microwave HEMT
Author :
Shen, L. ; Heikman, S. ; Moran, B. ; Coffie, R. ; Zhang, N.-Q. ; Buttari, D. ; Smorchkova, I.P. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
In this letter, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT) is discussed. Contrary to normal HEMTs, the insertion of the very thin AlN interfacial layer (/spl sim/1 nm) maintains high mobility at high sheet charge densities by increasing the effective /spl Delta/E/sub C/ and decreasing alloy scattering. Devices based on this structure exhibited good DC and RF performance. A high peak current 1 A/mm at V/sub GS/=2 V was obtained and an output power density of 8.4 W/mm with a power added efficiency of 28% at 8 GHz was achieved.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor heterojunctions; 2 V; 28 percent; 8 GHz; AlGaN-AlN-GaN; AlN interfacial layer; alloy scattering; high-power microwave HEMT; mobility; output power density; peak current; power added efficiency; sheet charge densities; Aluminum gallium nitride; Electron mobility; Gallium nitride; HEMTs; Heterojunctions; Lead; MODFETs; Microwave transistors; Power generation; Scattering;
Journal_Title :
Electron Device Letters, IEEE
