DocumentCode
1538992
Title
Gate current analysis of LT-GaAs passivated MESFETs
Author
Boudart, B. ; Gaquiére, C. ; Théron, D.
Author_Institution
IEMN (DHS), Villeneuve d´´Ascq, France
Volume
33
Issue
17
fYear
1997
fDate
8/14/1997 12:00:00 AM
Firstpage
1496
Lastpage
1498
Abstract
The gate current of LT-GaAs passivated MESFETs has been analysed. For the first time, the bell shape of this current is not due to an ionisation mechanism. Moreover, the electrical properties of the LT-GaAs material are observed to change with polarisation conditions. This phenomenon has been confirmed by electrical measurements performed at different temperatures
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; passivation; GaAs; GaAs passivated MESFETs; electrical properties; gate current analysis; low-temperature GaAs material; polarisation conditions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971002
Filename
621662
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