Title :
Gate current analysis of LT-GaAs passivated MESFETs
Author :
Boudart, B. ; Gaquiére, C. ; Théron, D.
Author_Institution :
IEMN (DHS), Villeneuve d´´Ascq, France
fDate :
8/14/1997 12:00:00 AM
Abstract :
The gate current of LT-GaAs passivated MESFETs has been analysed. For the first time, the bell shape of this current is not due to an ionisation mechanism. Moreover, the electrical properties of the LT-GaAs material are observed to change with polarisation conditions. This phenomenon has been confirmed by electrical measurements performed at different temperatures
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; passivation; GaAs; GaAs passivated MESFETs; electrical properties; gate current analysis; low-temperature GaAs material; polarisation conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971002
