Title :
A new pad-oriented multiple-mode ESD protection structure and layout optimization
Author :
Feng, H. ; Zhan, R. ; Gong, K. ; Wang, Albert Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
This work reports a new multiple-mode pad-oriented electrostatic discharge (ESD) protection structure, which protects input-output pads against ESD pulses of all modes. A unique pad-based quasi-symmetric layout design is devised to improve ESD robustness. The new ESD structure features tunable triggering voltage, low holding voltage, low on-impedance, low leakage (/spl sim/pA), fast response time (/spl sim/0.18 ns), and low parasitic effect. It can be placed under a bond pad and consumes little silicon. It passed 14 kV human body model and 15 kV air-gap International Electrotechnical Commission ESD zapping. It was demonstrated in commercial BiCMOS processes and is suitable for multiple-supply mixed-signal, parasitic-sensitive RF and high-pin-count ICs.
Keywords :
BiCMOS integrated circuits; circuit optimisation; electrostatic discharge; integrated circuit layout; overvoltage protection; 1.8 ns; 14 kV; 15 kV; ESD pulses; ESD robustness improvement; Si; air-gap IEC ESD zapping; bond pad; commercial BiCMOS processes; electrostatic discharge protection; fast response time; high-pin-count ICs; human body model; input-output pads; layout optimization; low holding voltage; low leakage; low on-impedance; low parasitic effect; multiple-mode ESD protection structure; multiple-supply mixed-signal ICs; pad-based quasi-symmetric layout design; pad-oriented ESD protection structure; parasitic-sensitive RFICs; tunable triggering voltage; Air gaps; Biological system modeling; Bonding; Delay; Electrostatic discharge; Humans; Low voltage; Protection; Robustness; Silicon;
Journal_Title :
Electron Device Letters, IEEE
