Title :
Temperature stability of ultrahigh-speed GaAs JFET ICs
Author :
Kawasaki, H. ; Wada, M. ; Hida, Y. ; Takano, C. ; Kasahara, J.
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
Ultrahigh-speed digital integrated circuits (ICs) implemented with GaAs/int JFETs are confirmed to be reliable in a wide variety of temperatures. Divide-by-256/258 dual-modulus prescaler ICs using source-coupled FET logic (SCFL) circuits that can operate up to 9 GHz have temperature coefficients of operating frequency stability and input power sensitivity of -17.2 MHz/degree and +0.12 dBm/degree between -20 and +100°C, respectively. Direct-coupled FET logic (DCFL) circuits were also confirmed to have very small temperature coefficients. The variations of the maximum operating frequency and the input power sensitivity of the DCFL divide-by-4 divider IC are -1.93 MHz/degree and +0.47 dBm/degree, respectively, between -60 and +100°C. The variation in the threshold voltage of the JFET is -0.88 mV/degree which is very small for the temperature stability of GaAs digital ICs
Keywords :
III-V semiconductors; dividing circuits; field effect integrated circuits; gallium arsenide; integrated logic circuits; junction gate field effect transistors; -20 to 100 degC; GaAs/int; III-V semiconductors; JFETs; digital ICs; direct-coupled FET logic; divider IC; dual-modulus prescaler ICs; input power; input power sensitivity; operating frequency stability; source-coupled FET logic; temperature coefficients; threshold voltage; Circuit stability; Digital integrated circuits; FETs; Frequency conversion; Gallium arsenide; Integrated circuit reliability; JFET integrated circuits; Logic circuits; Temperature sensors; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
