• DocumentCode
    1539175
  • Title

    Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient

  • Author

    Fukuda, H. ; Arakawa, T. ; Ohno, S.

  • Author_Institution
    Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1505
  • Lastpage
    1506
  • Abstract
    Nitridation of a thin SiO2 film has been achieved by rapid thermal processing (RTP) using only O2 and N2O as reactants. In comparison with pure SiO2 film, nitrided SiO2 (SiOxNy) film (8 nm), which includes about 5 at.% nitrogen at the SiOxNy/Si interface, showed a large charge-to-breakdown value greater than 30 C/cm2 and a density of electron traps lower than that of SiO2 in high-field stressing (> 8 MV/cm) under the condition of gate negatively biased.
  • Keywords
    heat treatment; insulating thin films; metal-insulator-semiconductor structures; semiconductor technology; silicon compounds; surface hardening; MOS structure; N 2O; SiO xN y-Si; charge-to-breakdown value; dielectric reliability; electron traps; heat treatment; high-field stressing; rapid thermal processing; thin SiO 2 film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900966
  • Filename
    58120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1539175