AlGaAs/GaAs surface emitting laser diode with curved reflector

An AlGaAs/GaAs surface-emitting laser diode using one step liquid phase epitaxial growth has been successfully fabricated. A micro-cleavage technique was developed to fabricate the mirrors of the laser cavity. The laser beam emitted horizontally from the edge of the laser cavity is converted to the vertical direction using a nearby slant metal reflector formed by pregrowth selective etching of the substrate and subsequent liquid phase epitaxial growth. The maximum power output is beyond 10 mW and the threshold current density achieved is 8 kA/cm². The full width at half maximum of the far field pattern perpendicular to the laser bar is 9 degrees .