Title :
Electronic cooling in Nb/AlO/sub x//Al/AlO/sub x//Nb double tunnel junctions
Author :
Capogna, L. ; Burnell, G. ; Blamire, M.G.
Author_Institution :
Dipartimento di Fisica, Salerno Univ., Italy
fDate :
6/1/1997 12:00:00 AM
Abstract :
Several recent papers have predicted the feasibility of superconducting tunnel junction-based electronic cryocooler devices operating in the temperature range 0.1-4 K. We have extended previous work in stacked Nb/AlO/sub x/ devices to investigate the nonequilibrium effects in them and to examine the influence of barrier conductance and layer thickness on the electronic cooling achievable by this technique. We have also analysed the maximum cooling possible with junctions of our present conductance.
Keywords :
aluminium; aluminium compounds; cooling; niobium; superconducting devices; superconducting junction devices; superconductive tunnelling; 0.1 to 4 K; Nb-AlO-Al-AlO-Nb; Nb/AlO/sub x//Al/AlO/sub x//Nb double tunnel junction; SINIS junction; barrier conductance; electronic cooling; layer thicknes; nonequilibrium effects; stacked superconducting cryocooler device; Artificial intelligence; Electrodes; Electronics cooling; Josephson junctions; Niobium; Physics; Superconducting epitaxial layers; Temperature distribution; Vacuum systems; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
