Analysis of Complementary RRAM Switching

Author

Wouters, Dirk J. ; Zhang, Leqi ; Fantini, Andrea ; Degraeve, Robin ; Goux, Ludovic ; Chen, Yang Y. ; Govoreanu, Bogdan ; Kar, Gouri S. ; Groeseneken, Guido V. ; Jurczak, Malgorzata

Author_Institution

imec, Leuven, Belgium

Volume

33

Issue

8

fYear

2012

Firstpage

1186

Lastpage

1188

Abstract

A novel procedure to decompose the I- V switching curves of complementary resistive switching (CRS) RRAM cells into the intrinsic switching characteristics of its individual constituting elements is proposed based on the set behavior of HfO₂-based bipolar RRAM elements. Analysis of different types of complementary cells indicates that very similar intrinsic switching behaviors occur in strongly different types of bipolar switching RRAM, however with a strong material dependence of the characteristic switching voltage.

Keywords

hafnium compounds; random-access storage; CRS RRAM cells; HfO₂; I-V switching curves; bipolar switching RRAM elements; characteristic switching voltage; complementary RRAM switching; complementary resistive switching RRAM cells; individual constituting elements; intrinsic switching behaviors; intrinsic switching characteristics; material dependence; Hafnium compounds; Materials; Random access memory; Resistance; Switches; Tin; Complementary resistive switch (CRS); memory devices; nonvolatile memory; resistive switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2198789

Filename

6217276