• DocumentCode
    1539486
  • Title

    Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

  • Author

    Zarea, A ; Sellai, A ; Raven, M S ; Steenson, D.P. ; Chamberlain, J.M. ; Henini, M. ; Hughes, 0.H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1522
  • Lastpage
    1523
  • Abstract
    The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.
  • Keywords
    III-V semiconductors; aluminium compounds; electric impedance measurement; gallium arsenide; tunnel diodes; DC bias; GaAs-AlGaAs; III-V semiconductors; NDR region; cut-off frequency; double-barrier resonant tunnel diodes; equivalent circuit; self-resonant frequency; semiconductor devices; small signal impedance; tunnel diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900977
  • Filename
    58131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1539486