DocumentCode :
1539573
Title :
Exponential expansion for field computation and capacitance extraction
Author :
Pham, Hoan H. ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
48
Issue :
10
fYear :
2001
fDate :
10/1/2001 12:00:00 AM
Firstpage :
1191
Lastpage :
1197
Abstract :
We report a new numerical technique based on the exponential expansion of the Green´s function 1/r for accurate and rapid computation of the three-dimensional potential field, its gradient, and the charge density distribution needed for capacitance extraction in multiple-dielectric-multiconductor systems. The exponential expansion provides a computational efficient alternative to the commonly used technique based on multipole expansion of spherical harmonics. With exponential expansion, the memory requirement is independent of the desired degree of accuracy and different forms of parallelism are available for both remotely distributed networks and closely coupled parallel systems. These features permit large-scale simulation, involving panel (element) count in the range of a few hundred thousand to several million, needed for extraction of the parasitic coupling capacitance in VLSI interconnects, including large-area amorphous silicon electronics, as well as for analysis of electrostatic interaction in micro-electro-mechanical systems (MEMS)
Keywords :
Green´s function methods; VLSI; capacitance; electric charge; electric fields; integrated circuit interconnections; micromechanical devices; numerical analysis; 3D potential field; Green function; MEMS; Si; VLSI interconnects; capacitance extraction; charge density distribution; closely coupled parallel systems; electrostatic analysis; electrostatic interaction; exponential expansion; field computation; field gradient; large-area amorphous Si electronics; large-scale simulation; micro-electro-mechanical systems; multiple-dielectric-multiconductor systems; numerical technique; parasitic coupling capacitance; remotely distributed networks; three-dimensional potential field; Amorphous silicon; Analytical models; Computational efficiency; Computational modeling; Distributed computing; Green´s function methods; Large-scale systems; Parallel processing; Parasitic capacitance; Very large scale integration;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.956013
Filename :
956013
Link To Document :
بازگشت