• DocumentCode
    1539666
  • Title

    Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures

  • Author

    Shi, Zitao ; Wang, Xin ; Liu, Jian ; Lin, Lin ; Zhao, Hui ; Fang, Qiang ; Wang, Li ; Zhang, Chen ; Fan, Siqiang ; Tang, He ; Li, Bei ; Wang, Albert ; Liu, Jianlin ; Cheng, Yuhua

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
  • Volume
    11
  • Issue
    5
  • fYear
    2012
  • Firstpage
    884
  • Lastpage
    889
  • Abstract
    This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time tr ~ 100 ps and pulse duration td; ~ ns, ESD protection density of 25 mA/μm in human body model and 400 mA/μm in charged device model equivalent stressing, and a very low leakage current of Ileak ~ 15 pA. The NC-QD ESD protection concept can potentially be used to design field-programmable on-chip ESD protection circuitry for mixed-signal ICs in nanoscales.
  • Keywords
    electrostatic discharge; mixed analogue-digital integrated circuits; semiconductor quantum dots; NC-QD ESD protection concept; adjustable ESD triggering voltage range; charged device model equivalent stressing; field-programmable on-chip ESD protection circuitry design; mixed-signal IC; nanocrystal quantum-dot; nanoscale; tunable on-chip electrostatic discharge protection mechanism; voltage 2.5 V; Crystals; Electrostatic discharges; Logic gates; MOSFET circuits; Programming; System-on-a-chip; ESD protection; Electrostatic discharge (ESD); nanocrystal quantum dot (NC-QD); tunable;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2012.2204767
  • Filename
    6217321