DocumentCode
1539666
Title
Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures
Author
Shi, Zitao ; Wang, Xin ; Liu, Jian ; Lin, Lin ; Zhao, Hui ; Fang, Qiang ; Wang, Li ; Zhang, Chen ; Fan, Siqiang ; Tang, He ; Li, Bei ; Wang, Albert ; Liu, Jianlin ; Cheng, Yuhua
Author_Institution
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Volume
11
Issue
5
fYear
2012
Firstpage
884
Lastpage
889
Abstract
This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time tr ~ 100 ps and pulse duration td; ~ ns, ESD protection density of 25 mA/μm in human body model and 400 mA/μm in charged device model equivalent stressing, and a very low leakage current of Ileak ~ 15 pA. The NC-QD ESD protection concept can potentially be used to design field-programmable on-chip ESD protection circuitry for mixed-signal ICs in nanoscales.
Keywords
electrostatic discharge; mixed analogue-digital integrated circuits; semiconductor quantum dots; NC-QD ESD protection concept; adjustable ESD triggering voltage range; charged device model equivalent stressing; field-programmable on-chip ESD protection circuitry design; mixed-signal IC; nanocrystal quantum-dot; nanoscale; tunable on-chip electrostatic discharge protection mechanism; voltage 2.5 V; Crystals; Electrostatic discharges; Logic gates; MOSFET circuits; Programming; System-on-a-chip; ESD protection; Electrostatic discharge (ESD); nanocrystal quantum dot (NC-QD); tunable;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2012.2204767
Filename
6217321
Link To Document