Title :
CW MM-wave GaAs TUNNETT diode
Author :
Pobl, M. ; Dalle, C. ; Freuer, J. ; Harth, W.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektron., Tech. Univ. Munchen, West Germany
Abstract :
GaAs single-drift TUNNETT diodes have been grown by MBE. For the first time CW-output power has been achieved in the V abd W-bands. The best performance achieved is 25 mW associated with a conversion efficiency of 2.8% at 70 GHz. Good agreement between experimental findings and theoretical predictions obtained by means of a drift-diffusion model is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; solid-state microwave devices; transit time devices; tunnel diodes; 2.8 percent; 25 mW; 70 GHz; EHF; GaAs; III-V semiconductor; MBE; TUNNETT diode; V-band; W-bands; single drift diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900989
