• DocumentCode
    1539914
  • Title

    High frequency gallium arsenide four-quadrant analogue multiplier

  • Author

    Toumazou, Christofer ; Haigh, D.G.

  • Author_Institution
    Imperial Coll. of Sci. Technol. & Med., London, UK
  • Volume
    26
  • Issue
    20
  • fYear
    1990
  • Firstpage
    1650
  • Lastpage
    1652
  • Abstract
    A general principle and some basic circuit techniques suitable for the implementation of the four-quadrant analogue multiplier using gallium arsenide depletion-mode MESFET technology are presented. A version of the circuit achieves a simulated accuracy of the order of 2% and a 3 dB bandwidth of 6.5 GHz using level 1 MESFET models in HSPICE.
  • Keywords
    III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; multiplying circuits; 6.5 GHz; HSPICE; MESFET models; bandwidth; circuit techniques; depletion-mode MESFET technology; four-quadrant analogue multiplier; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901057
  • Filename
    58159