Title :
High frequency gallium arsenide four-quadrant analogue multiplier
Author :
Toumazou, Christofer ; Haigh, D.G.
Author_Institution :
Imperial Coll. of Sci. Technol. & Med., London, UK
Abstract :
A general principle and some basic circuit techniques suitable for the implementation of the four-quadrant analogue multiplier using gallium arsenide depletion-mode MESFET technology are presented. A version of the circuit achieves a simulated accuracy of the order of 2% and a 3 dB bandwidth of 6.5 GHz using level 1 MESFET models in HSPICE.
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; multiplying circuits; 6.5 GHz; HSPICE; MESFET models; bandwidth; circuit techniques; depletion-mode MESFET technology; four-quadrant analogue multiplier; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901057
