مرکز منطقه ای اطلاع رساني علوم و فناوري - Waveguided electro-optical intensity modulation in a Si/Ge<sub>x</sub>Si<sub>1-x</sub>/Si heterojunction bipolar transistor

DocumentCode :

1539926

Title :

Waveguided electro-optical intensity modulation in a Si/Ge_xSi_1-x/Si heterojunction bipolar transistor

Author :

Lareau, R.D. ; Friedman, L. ; Soref, Richard A.

Author_Institution :

Dept. of Electr. Eng., Worcester Polytech. Inst., MA, USA

Volume :

Issue :

fYear :

1990

Firstpage :

1653

Lastpage :

1655

Abstract :

Optical phase-and-amplitude modulation at 1.55 mu m in an electro-optic guided-wave Si/Ge_0.2Si_0.8/Si HBT is investigated using computer-aided modelling and simulation. At an injection of 10¹⁹ electrons per cm³, an intensity modulation of 10 dB is predicted for an active length of 390 mu m.

Keywords :

Ge-Si alloys; electro-optical devices; heterojunction bipolar transistors; optical communication equipment; optical modulation; optical waveguide components; semiconductor device models; semiconductor junctions; 1.55 micron; active length; computer-aided modelling; heterojunction bipolar transistor; intensity modulation; phase-and-amplitude modulation; waveguided electrooptic intensity modulation;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19901059

Filename :

58161

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1539926