Title :
High speed electron-beam testing of VLSI circuits by backscattered electron detection
Author_Institution :
Dept. of Electr. Eng., Edinburgh Univ., UK
Abstract :
A scheme which is predicted to increase the time resolution of electron beam testers by more than an order of magnitude to a value of around 400 fs is described. The new proposal is based on using multi-channel angular backscattered detection which can be used in conjunction with the normal operating mode of electron beam testers.
Keywords :
VLSI; electron beam applications; integrated circuit testing; particle backscattering; scanning electron microscopy; voltage measurement; IC testing; backscattered electron detection; electron beam testers; electron-beam testing of VLSI circuits; high speed testing; multi-channel angular backscattered detection; time resolution; voltage contrast;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901061
